JPH0147900B2 - - Google Patents
Info
- Publication number
- JPH0147900B2 JPH0147900B2 JP56019439A JP1943981A JPH0147900B2 JP H0147900 B2 JPH0147900 B2 JP H0147900B2 JP 56019439 A JP56019439 A JP 56019439A JP 1943981 A JP1943981 A JP 1943981A JP H0147900 B2 JPH0147900 B2 JP H0147900B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- forming
- electrode
- transistor
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012535 impurity Substances 0.000 claims description 80
- 239000004065 semiconductor Substances 0.000 claims description 64
- 230000003647 oxidation Effects 0.000 claims description 37
- 238000007254 oxidation reaction Methods 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 34
- 238000005530 etching Methods 0.000 claims description 29
- 230000005669 field effect Effects 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 238000002955 isolation Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 230000000694 effects Effects 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 78
- 238000009792 diffusion process Methods 0.000 description 40
- 235000012239 silicon dioxide Nutrition 0.000 description 39
- 239000000377 silicon dioxide Substances 0.000 description 39
- 229910052581 Si3N4 Inorganic materials 0.000 description 28
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 27
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 229910052710 silicon Inorganic materials 0.000 description 19
- 239000010703 silicon Substances 0.000 description 19
- 229910052796 boron Inorganic materials 0.000 description 18
- 238000000206 photolithography Methods 0.000 description 18
- 229920002120 photoresistant polymer Polymers 0.000 description 18
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 14
- 239000002131 composite material Substances 0.000 description 14
- 238000000605 extraction Methods 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 12
- 238000005468 ion implantation Methods 0.000 description 8
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 229910052785 arsenic Inorganic materials 0.000 description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 5
- -1 phosphorus ions Chemical class 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 238000000576 coating method Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000007853 buffer solution Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
- H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
Landscapes
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56019439A JPS57133664A (en) | 1981-02-12 | 1981-02-12 | Semiconductor element and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56019439A JPS57133664A (en) | 1981-02-12 | 1981-02-12 | Semiconductor element and manufacture thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57133664A JPS57133664A (en) | 1982-08-18 |
| JPH0147900B2 true JPH0147900B2 (en]) | 1989-10-17 |
Family
ID=11999320
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56019439A Granted JPS57133664A (en) | 1981-02-12 | 1981-02-12 | Semiconductor element and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57133664A (en]) |
-
1981
- 1981-02-12 JP JP56019439A patent/JPS57133664A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57133664A (en) | 1982-08-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4778774A (en) | Process for manufacturing a monolithic integrated circuit comprising at least one bipolar planar transistor | |
| US5019523A (en) | Process for making polysilicon contacts to IC mesas | |
| JP2824263B2 (ja) | 高電圧併合バイポーラ／ｃｍｏｓ集積回路 | |
| JPS5915495B2 (ja) | 半導体装置 | |
| JP2587444B2 (ja) | Ｃｍｏｓ技術を用いたバイポーラ・トランジスタとその製造方法 | |
| JPH0557741B2 (en]) | ||
| JPS6228587B2 (en]) | ||
| JPH0147900B2 (en]) | ||
| JP2633559B2 (ja) | バイポーラ―ｃｍｏｓ半導体装置の製造方法 | |
| JPH03262154A (ja) | ＢｉＣＭＯＳ型半導体集積回路の製造方法 | |
| JPH0366815B2 (en]) | ||
| JPS6013313B2 (ja) | 半導体装置の製造方法 | |
| JPS6123665B2 (en]) | ||
| JPS6244862B2 (en]) | ||
| JP2915040B2 (ja) | 半導体装置の製造方法 | |
| JP2518357B2 (ja) | 半導体装置及びその製造方法 | |
| JP3052347B2 (ja) | 半導体装置及びその製造方法 | |
| JPS628939B2 (en]) | ||
| JP2633374B2 (ja) | 半導体装置およびその製造方法 | |
| JP3300474B2 (ja) | 半導体装置およびその製造方法 | |
| JPH0136709B2 (en]) | ||
| JPS5951152B2 (ja) | 半導体装置の製造方法 | |
| JPH01238058A (ja) | 高速バイポーラトランジスタの製造方法 | |
| JPS61214568A (ja) | 半導体装置の製造方法 | |
| JPS6386476A (ja) | 半導体集積回路装置の製造方法 |